copyright Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

copyright Recombination Dynamics Investigations of Strain-Compensated InGaAsN Quantum Wells

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The keychron m6 mouse time evolution of the photoluminescence (PL) of 1300-nm emitting InGaAsN/ GaAs/GaAsP strain-compensated single quantum well (QW) in the temperature range of T 1/4 10 K - 300 K is investigated.The PL spectra observed at the early stages of copyright recombination is dominated by two transitions.These two transitions are identified as the first quantized electron state to heavy-hole state (e1-hh1) and electron to light-hole state (e1-lh1) from the analysis of polarized photocurrent measurements in combination with k · p simulation of the band structure.

At longer time delays, the dilute-nitride QW exhibits copyright localization at low temperatures and faster recombination time at higher temperatures.The PL dynamics characteristics observed blueberry bubblicious in the InGaAsN QW are different from those measured from the InGaAs QW.